Samsung has started mass-producing what they say is the fastest flash storage ever. These are the 512 GB eUFS 3.0 chips, which must be twenty times faster than a typical microSD card. That’s what ZDNet reports.

The chip will be the first 512 GB eUFS 3.0 chip for mobile devices, which is twice as fast as eUFS 2.1. The 512 GB eUFS storage chips were unveiled by Samsung in 2017. The biggest difference between the old and the new version is an improvement in speed. The new version has a reading speed of 2,100 MB per second, double the eUFS 2.1. The writing speed is 410 MB per second.

The chips must be able to move a full HD movie from a computer to a smartphone in just a few seconds. In addition, the company says it thinks that the chips will help with high-resolution screens on smartphones. The 512GB and 128GB eUFS 3.0 chips will be launched later this month. In the second half of this year, there will also be a 1TB storage option and a 256GB model.

Structure

The new 512GB eUFS 3.0 is made up of eight 512-gigabit V-NAND stacks and a controller. It offers random read and write speeds that are 36 percent faster than the eUFS 2.1 specification and 630 times faster than the general microSD cards.

“Starting mass production of our eUFS 3.0-lineup gives us a big advantage in the next-generation mobile market, where we’re bringing a read speed for memory that was previously only possible on ultra-thin laptops,” said Cheol Choi, executive vice president of memory sales and marketing at Samsung.

“As we expand our eUFS 3.0 offerings – including a 1TB version later this year – we expect to play a major role in accelerating momentum in the premium mobile market.

This news article was automatically translated from Dutch to give Techzine.eu a head start. All news articles after September 1, 2019 are written in native English and NOT translated. All our background stories are written in native English as well. For more information read our launch article.